^eml-dontiuatoi zpioaucti, ljna. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 power field effect transistor n-channel enhancement-mode silicon gate this tmos power fet is designed for high voltage, high speed power switching applications such as switching regulators, con- verters, solenoid and relay drivers. ? silicon gate for fast switching speeds ? switching times specified at 100'c ? designer's data ? idss< vds(on). vcs(th) and soa specified at elevated temperature ? rugged ? soa is power dissipation limited ? source-to-drain diode characterized for use with inductive loads maximum ratings MTM2N50 tmos power fet 2 amperes rds(on) = 4 ohms 500 volts rating drain-source voltage drain-gate voltage (?gs = 1 mftl gate-source voltage ? continuous ? non-repetitive (tp * 50 ins) drain current continuous pulsed total power dissipation @ tq = 25c derate above 25"c operating and storage temperature range symbol vdss vdgr vgs vgsm id idm pd tj, tstg value 500 500 20 40 2 7 75 0.6 -65 to 150 unit vdc vdc vdc vpk adc watts w/c c thermal characteristics thermal resistance junction to case junction to ambient maximum lead temperature for soldering purposes. 1/8" from case for 5 seconds "we r0ja tl 1.67 30 300 c/w c to-204aa nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets nre current before placing orders. ounlitv
electrical characteristics (tc - 25c unless otherwise noted) characteristic symbol min max unit off characteristics drain-source breakdown voltage (vgs = 0, id = 0.25 ma) mtp2n45 mtm/mtp2n50 zero gate voltage drain current (vds = rated vdss- vgs = 0) (vds = 0.8 rated vdss- vqs = - tj = 125c> gate-body leakage current, forward (vqsf = 20 vdc, vds = 0) gate-body leakage current, reverse (vqsr = 20 vdc, vds ** 0) v(br]dss idss igssf igssr 450 500 - - - ? 0.2 1 100 100 vdc madc nadc nadc on characteristics* gate threshold voltage (vds = vgs- 'd = 1 rna) tj = 100c static drain source on-resistance (vgs = 10 vdc, id - 1 adc) drain-source on-voltage (vqs = 10 v) (|q = 2 adc) do - 1 adc. tj = 100ci forward transconductance (vds ** 15 v. id = 1 a) vgstth) rds(on) vds(on) 9fs 2 1.5 - - 1 4.5 4 4 10 8 ? vdc ohms vdc mhos dynamic characteristics input capacitance output capacitance reverse transfer capacitance (vds - 25 v, vgs - o. f = 1 mhz) see figure 1 1 ciss coss crss ? ? ? 500 100 50 pf switching characteristics* (tj = 100x1 turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge |
